腐蚀
氧化物
X射线光电子能谱
溶解
材料科学
合金
电化学
化学吸附
图层(电子)
金属
氧气
相(物质)
冶金
化学工程
无机化学
化学
吸附
复合材料
电极
物理化学
有机化学
工程类
作者
B. Siemensmeyer,J.W. Schultze
标识
DOI:10.1002/sia.740160164
摘要
Abstract Owing to its high corrosion resistance, Ti is used as a containment material for processes in hot nitric acid. The corrosion stability of Ti can be improved still further by alloying with 5% Ta. The oxidation behaviour of Ti and Ti5Ta and the composition and stability of their oxide layers are compared by means of XPS, UPS, electrochemical measurements and corrosion test. Thin oxide layers of up to 2 nm have been formed by gas‐phase oxidation. Three regions can be observed due to chemisorption, oxide formation and oxide growth. The average composition of the oxide layer after an oxygen exposure of 1000 L is Ti 2 O 3 , with a layer thickness of 1.8 nm. The change of Ti oxidation states during oxidation shows that the metal/oxide interface is a mixed oxide of TiO, Ti 2 O 3 and TiO 2 , while TiO 2 is formed at the oxide/vacuum interface. The change of work function during oxidation is similar for Ti and Ti5Ta. Thicker oxide layers have been built electrochemically, with no differences in capacity measurements between Ti and Ti5Ta, indicating similar electronic properties. No significant Ta enrichment in 1 N H 2 SO 4 and 1 N HNO 3 is found up to 10 V. Preferential dissolution of Ti in corrosion tests in hot HNO 3 leads to Ta enrichments by factors of >10, which explains the improved corrosion stability of the alloy. The surface is covered by a barrier oxide of ∼10 nm and a porous outer layer with a thickness of >50 nm.
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