Blue-, green-, and red-light emission from Si+-implanted thermal SiO2 films on crystalline silicon

Three primary color emission bands, 467 nm (~ 2.7 eV), 540 nm (~ 2.3 eV), and 680 nm (~ 1.8 eV), were observed from Si+-implanted thermal SiO2 films on crystalline Si under ultraviolet excitation at room temperature. The blue emission is caused by oxygen vacancies in the films, and the green emission may also be caused by oxygen vacancies. The red emission, observed in 1100 °C annealed samples, is due to nanocrystalline Si precipitation.