Enhanced p-CuI/n-ZnO photodetector based on thermal evaporated CuI and pulsed laser deposited ZnO nanowires

The p-CuI/n-ZnO heterojunction photodetectors have been fabricated by thermal evaporation technique and pulsed laser deposition with a tubular furnace. The morphology, structure, and the light response performances of the device were investigated. The p-CuI/n-ZnO heterojunction photodetectors demonstrated a high on/off ratio of 5500, high peak responsivity of 0.235 A/W, and high specific detectivity of 1.23 × 10 12 c m H z 1 / 2 / W at − 5 V bias voltage under 385 nm light illumination. Furthermore, the p-CuI/n-ZnO heterojunction photodetectors exhibited excellent reproducibility and stability.