光电导性
材料科学
半导体
光电效应
光电子学
铟
镓
锌
宽禁带半导体
纳米纤维
纳米技术
氧化物
氧化铟锡
发光二极管
电导率
半导体材料
光刻胶
作者
Zheng Wei,Jiabin Song,Jinhua Liu,Yuze Sun,Shuaijie Wang,Zhi Li,Shumeng Li,Wen-yue Wang,Jianlong Jiao,Lingyun Li,Hui Guo,Wenpeng Han,Yunze Long
标识
DOI:10.1088/1361-6463/ae1f26
摘要
Abstract In recent years, persistent photoconductivity (PPC) has received significant attention due to its potential applications in a wide range of fields. This study focuses on the PPC observed in electrospun indium gallium zinc oxide (IGZO) semiconductor nanofibers, particularly the persistence of photoconductivity following the cessation of light excitation. The study delves into the mechanisms underlying the PPC effect in IGZO materials, with a specific focus on how the structure of electrospun nanofibers influences this phenomenon. We examine the effects of composition and temperature on the photoresponse of IGZO nanofibers, concluding that electrospun IGZO semiconductors exhibit distinct PPC mechanisms at low and high temperatures. This variation is primarily attributed to the significant role of interface defects, introduced during electrospinning, in influencing the PPC effect at elevated temperatures. This research introduces an innovative strategy for developing advanced photoelectric materials and devices.
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