钝化
材料科学
兴奋剂
化学物理
载流子
离子半径
掺杂剂
氧化物
从头算
离解(化学)
离子键合
过渡金属
锐钛矿
从头算量子化学方法
无机化学
光电子学
载流子寿命
金红石
半导体
空位缺陷
金属
氧气
碱金属
基本电荷
分子物理学
电荷(物理)
有效核电荷
纳米技术
作者
Chunyang Zhang,Wenjia Gu,Elizabeth Stippell,Oleg V. Prezhdo,Maochang Liu,Liejin Guo
标识
DOI:10.1021/acs.chemmater.5c02247
摘要
Charge compensation at oxygen vacancies via elemental doping is an effective strategy for suppressing rapid carrier recombination. However, a systematic criterion for element selection toward efficient oxygen vacancy (Ov) passivation is still lacking. Herein, we perform ab initio quantum dynamics simulations on rutile TiO2 as a model system and elucidate the charge compensation mechanism of Ov passivation by alkaline earth metal doping (Be, Mg, Ca, and Sr). The simulations allow us to demonstrate and rationalize the influence of ionic radius on the passivation mechanism. Analysis of carrier recombination dynamics reveals that dopants with smaller atomic radii (e.g., Be) readily dissociate from Ov sites. This dissociation markedly reduces the electron−phonon coupling, consequently extending the carrier lifetime to 400 times that of the unpassivated system and 3 times that of pristine TiO2. Importantly, we extend and validate the demonstrated Ov passivation strategy to other materials, including anatase TiO2, ZrO2, and BiVO4, confirming its universal applicability. The work establishes an element selection criterion for defect passivation based on the charge compensation strategy and provides a material design principle for overcoming the bottleneck in the charge separation efficiency in oxide photocatalysis.
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