单层
材料科学
光致发光
兴奋剂
磁性
掺杂剂
过渡金属
纳米技术
铁磁性
光电子学
凝聚态物理
催化作用
化学
有机化学
物理
作者
Yuliang Ouyang,Wei Li,Zhang Chang-wen,Xiangyi Wang,Liang Ma,Hao Wang,He Lin,Guifu Zou,Juntong Zhu
标识
DOI:10.1002/adom.202302596
摘要
Abstract Atomically doping in thin film poses a significant challenge due to the potential for dopant precipitation caused by self‐purification effects. This challenge is particularly pronounced in the case of doping monolayers of photoluminescent transition metal dichalcogenides, where high energy barriers are also required to break the in‐plane bonds between the transition metal (TM) and chalcogen atoms. To address this issue, this study introduces hydroxide ions to adsorb onto the surface of WS 2 monolayers. This results in a significant reduction in the formation energy of the TM─S bonds, enabling them to substitute for W sites and overcoming the self‐purification effect of WS 2 monolayers. The in‐plane doping of TMs including Cr, Mn, Fe, Co, and Ni atoms is confirmed through precise atomic‐scale chemical imaging using scanning transmission electron microscopy with electron energy loss spectroscopy mapping. Photoluminescence measurements reveal that the band structure of WS 2 monolayers can be systematically modulated by different doping metals, owing to their distinct atomic sizes. In addition, the atomically‐doped WS 2 monolayers exhibit room‐temperature ferromagnetism, which has never been seen in pristine WS 2 monolayers. The modulation of the band structure and the emergence of magnetism in TMs‐doped WS 2 monolayers hold significant promise for optoelectronic and magnetoelectric applications.
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