神经形态工程学
铁电性
材料科学
晶体管
MNIST数据库
兴奋性突触后电位
纳米尺度
计算机科学
光电子学
突触
人工神经网络
抑制性突触后电位
电子工程
电压
纳米技术
电气工程
神经科学
人工智能
电介质
工程类
生物
作者
Chong‐Myeong Song,Dongha Kim,Shinbuhm Lee,Hyuk‐Jun Kwon
标识
DOI:10.1002/advs.202308588
摘要
Abstract In this study, the development and characterization of 2D ferroelectric field‐effect transistor (2D FeFET) devices are presented, utilizing nanoscale ferroelectric HfZrO 2 (HZO) and 2D semiconductors. The fabricated device demonstrated multi‐level data storage capabilities. It successfully emulated essential biological characteristics, including excitatory/inhibitory postsynaptic currents (EPSC/IPSC), Pair‐Pulse Facilitation (PPF), and Spike‐Timing Dependent Plasticity (STDP). Extensive endurance tests ensured robust stability (10 7 switching cycles, 10 5 s (extrapolated to 10 years)), excellent linearity, and high G max / G min ratio (>10 5 ), all of which are essential for realizing multi‐level data states (>7‐bit operation). Beyond mimicking synaptic functionalities, the device achieved a pattern recognition accuracy of ≈94% on the Modified National Institute of Standards and Technology (MNIST) handwritten dataset when incorporated into a neural network, demonstrating its potential as an effective component in neuromorphic systems. The successful implementation of the 2D FeFET device paves the way for the development of high‐efficiency, ultralow‐power neuromorphic hardware which is in sub‐femtojoule (48 aJ/spike) and fast response (1 µs), which is 10 4 folds faster than human synapse (≈10 ms). The results of the research underline the potential of nanoscale ferroelectric and 2D materials in building the next generation of artificial intelligence technologies.
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