材料科学
电介质
高-κ电介质
掺杂剂
兴奋剂
光电子学
神经形态工程学
介电常数
栅极电介质
泄漏(经济)
晶体管
纳米技术
电气工程
电压
计算机科学
机器学习
人工神经网络
经济
宏观经济学
工程类
作者
Xiaowei Chen,Yifan Sun,Xiaosong Wu,Shuhui Shi,Zhongrui Wang,Jian Zhang,Wei‐Hui Fang,Weiguo Huang
标识
DOI:10.1002/adma.202306260
摘要
The dielectric layer is crucial in regulating the overall performance of field-effect transistors (FETs), the key component in central processing units, sensors, and displays. Despite considerable efforts being devoted to developing high-permittivity (k) dielectrics, limited progress is made due to the inherent trade-off between dielectric constant and loss. Here, a solution is presented by designing a monodispersed disk-shaped Ce-Al-O-macrocycle as a dopant in polymer dielectrics. The molecule features a central Ce(III) core connected with eight Al atoms through sixteen bridging hydroxyls and eight 3-aminophenyl peripheries. The incorporation of this macrocycle in polymer dielectrics results in an up to sevenfold increase in dielectric constants and up to 89% reduction in dielectric loss at low frequencies. Moreover, the leakage-current densities decrease, and the breakdown strengths are improved by 63%. Relying on the above merits, FETs bearing cluster-doped polymer dielectrics give near three-orders source-drain current increments while maintaining low-level leakage/off currents, resulting in much higher charge-carrier mobilities (up to 2.45 cm2 V-1 s-1 ) and on/off ratios. This cluster-doping strategy is generalizable and shows great promise for ultralow-power photoelectric synapses and neuromorphic retinas. This work successfully breaks the trade-off between dielectric constant and loss and offers a unique design for polymer composite dielectrics.
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