电磁干扰
转换器
计算机科学
电子工程
可靠性(半导体)
降压式变换器
噪音(视频)
氮化镓
门驱动器
电磁干扰
功率(物理)
电压
电气工程
工程类
材料科学
物理
图层(电子)
量子力学
人工智能
复合材料
图像(数学)
作者
Xuchu Mu,Guangshu Zhao,Anyang Zhao,Yang Jiang,Man‐Kay Law,Makoto Takamiya,Pui‐In Mak,Rui P. Martins
出处
期刊:IEEE Transactions on Circuits and Systems I-regular Papers
[Institute of Electrical and Electronics Engineers]
日期:2023-07-28
卷期号:70 (9): 3790-3805
被引量:4
标识
DOI:10.1109/tcsi.2023.3288871
摘要
This paper presents the design challenges and advanced circuit techniques of integrated gate drivers for non-isolated buck converters using gallium nitride (GaN) devices to achieve fast switching and high conversion efficiency. Focusing on the essential tradeoff considerations, we first explain the detailed circuit-level issues of realizing normal and safe operations regarding integration feasibility, device safety, operation reliability, and power-stage loss alleviation when driving a GaN switch. Accordingly, we review the state-of-the-art techniques for improving various aspects of the performance, including on-chip bootstrapping enhancement, over-voltage and false-switching prevention, electromagnetic interference (EMI) noise suppression, and adaptive driving optimization. We further highlight the feature advantage of distinct techniques in specific performance/function aspects, aiming to bring GaN driver design insights and providing technical references regarding the technical superiority and limitations of improving the overall converter performance.
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