Enhancement of Power-Added Efficiency in GaAs Power Amplifiers by Dynamic Gate Biasing

We demonstrate the efficiency and linearity improvement of an E-band GaAs power amplifier (PA) through dynamic gate modulation. By optimizing the coefficients of the linear power tracking gate modulation function, we enhance the output power at the spectrum emission mask limit from 24.1dBm to 25.8dBm. This leads to a significant improvement in average power-added efficiency $(\\overline {PAE} )$ from 4.9% to 7.4%, surpassing third-order digital pre-distortion (DPD). Our findings highlight the potential of dynamic gate biasing for enhancing efficiency and linearity in mm-wave and sub-THz power amplifiers.