Accurate X-ray diffraction data required for proper evaluation of bond valence sums and global instability indexes: redetermination of the crystal structures of diamond-like Cu2CdSiS4 and Cu2HgSnS4 as a case study

价(化学) 结晶学 晶体结构 离子 化学 X射线晶体学 衍射 材料科学 物理 光学 有机化学
作者
M.M. Treece,Jordan C. Kelly,Kate E. Rosello,Andrew J. Craig,Jennifer A. Aitken
标识
DOI:10.1107/s2053229623006848
摘要

Our calculations of the global instability index ( G ) values for some diamond-like materials with the general formula I 2 –II–IV–VI 4 have indicated that the structures may be unstable or incorrectly determined. To compute the G value of a given compound, the bond valence sums (BVSs) must first be calculated using a crystal structure. Two examples of compounds with high G values, based on data from the literature, are the wurtz–stannite-type dicopper cadmium silicon tetrasulfide (Cu 2 CdSiS 4 ) and the stannite-type dicopper mercury tin tetrasulfide (Cu 2 HgSnS 4 ), which were first reported in 1967 and 1965, respectively. In the present study, Cu 2 CdSiS 4 and Cu 2 HgSnS 4 were prepared by solid-state synthesis at 1000 and 900 °C, respectively. The phase purity was assessed by powder X-ray diffraction. Optical diffuse reflectance UV/Vis/NIR spectroscopy was used to estimate the optical bandgaps of 2.52 and 0.83 eV for Cu 2 CdSiS 4 and Cu 2 HgSnS 4 , respectively. The structures were solved and refined using single-crystal X-ray diffraction data. The structure type of Cu 2 CdSiS 4 was confirmed, where Cd 2+ , Si 4+ and two of the three crystallographically unique S 2− ions lie on a mirror plane. The structure type of Cu 2 HgSnS 4 was also verified, where all ions lie on special positions. The S 2− ion resides on a mirror plane, the Cu + ion is situated on a fourfold rotary inversion axis and both the Hg 2+ and the Sn 4+ ions are located on the intersection of a fourfold rotary inversion axis, a mirror plane and a twofold rotation axis. Using the crystal structures solved and refined here, the G values were reassessed and found to be in the range that indicates reasonable strain for a stable crystal structure. This work, together with some examples gathered from the literature, shows that accurate data collected on modern instrumentation should be used to reliably calculate BVSs and G values.

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