Recent advances of oxygen vacancies in MoO3: preparation and roles

As a widely used transition metal oxide semiconductor, molybdenum oxide has great potential for application due to the advantages of abundant reserves, low cost and rich valence states. However, the low conductivity, large bandgap and slow reaction kinetics of MoO3 hindered its further applications. The introduction of oxygen vacancies in transition metal oxides form non stoichiometric molybdenum oxide can effectively regulate the band gap and carrier concentration of molybdenum oxide. Here, we review the latest research progress of nanostructured molybdenum oxide, with a focus on demonstrating the influence of oxygen vacancies on its physical and chemical properties. Systematically elaborated on the introduction method of oxygen vacancies in molybdenum oxide nanostructures. In the application section, we also pay special attention to the influence of the introduction and content changes of oxygen vacancies on the properties of molybdenum oxide-based materials, involving catalysis, chromic devices, energy storage fields, etc. In addition, by reviewing the DFT results, the formation mechanism of oxygen vacancies in molybdenum oxide and their impact on semiconductor energy bands are further elucidated. Finally, we propose some suggestions for the regulation and utilization of oxygen vacancies in molybdenum oxide, providing theoretical guidance for the further design and application of molybdenum oxide.