拉曼光谱
分子束外延
硅
结晶度
材料科学
X射线光电子能谱
碳纤维
扫描电子显微镜
分析化学(期刊)
外延
结晶学
纳米技术
化学
光电子学
化学工程
光学
复合材料
工程类
物理
复合数
色谱法
图层(电子)
作者
Tuhin Dey,Md. Shamim Reza,Augustus W. Arbogast,M. Holtz,Ravi Droopad,Seth R. Bank,Mark A. Wistey
摘要
Tensile-strained pseudomorphic Ge1–x–ySnxCy was grown on GaAs substrates by molecular beam epitaxy using carbon tetrabromide (CBr4) at low temperatures (171–258 °C). High resolution x-ray diffraction reveals good crystallinity in all samples. Atomic force microscopy showed atomically smooth surfaces with a maximum roughness of 1.9 nm. The presence of the 530.5 cm−1 local vibrational mode of carbon in the Raman spectrum verifies substitutional C incorporation in Ge1–x–ySnxCy samples. X-ray photoelectron spectroscopy confirms carbon bonding with Sn and Ge without evidence of sp2 or sp3 carbon formation. The commonly observed Raman features corresponding to alternative carbon phases were not detected. Furthermore, no Sn droplets were visible in scanning electron microscopy, illustrating the synergy in C and Sn incorporation and the potential of Ge1–x–ySnxCy active regions for silicon-based lasers.
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