抛光
材料科学
质量分数
氧化剂
磨料
化学机械平面化
粒径
表面粗糙度
磁流变液
化学工程
Crystal(编程语言)
催化作用
粒子(生态学)
相(物质)
复合材料
冶金
化学
有机化学
工程类
阻尼器
地质学
海洋学
结构工程
程序设计语言
计算机科学
作者
Da Hu,Huilong Li,Jiabin Lu,Qingzhi Yan,Qihua Xiong,Zhanliang Huang,Fenglin Zhang
标识
DOI:10.1088/1361-665x/acacd8
摘要
Abstract Magnetorheological elastomers (MRE) are intelligent controllable materials used as polishing pads in chemical mechanical polishing (CMP), and the magnetic particles in the MRE polishing pad are used as solid-phase catalysts for heterogeneous Fenton reactions for oxidizing single-crystal SiC surfaces, thereby helping reduce the processing difficulty and obtain high-quality surfaces. The influence of the solid-phase catalyst (Fe 3 O 4 mass fraction, particle size) and polishing solution environment (H 2 O 2 concentration, pH value) on the CMP heterogeneous Fenton reaction polishing single-crystal SiC were investigated. The material removal behavior of the MRE polishing pad was investigated. The results demonstrated that the solid-phase catalyst, Fe 3 O 4 , has a better superior effect than the carbonyl iron powder (CIP). The polishing material removal rate ( MRR ) increased and the surface roughness ( R a ) decreased with an increase in the Fe 3 O 4 mass fraction. Superior polishing results were obtained at a particle size of 0.3 μ m. The higher the H 2 O 2 concentration in the polishing solution, the greater the MRR , with lower R a at 10% concentration. The highest MRR and lowest R a were achieved at pH = 3 in acidic environments. During polishing, the heterogeneous Fenton reaction can significantly enhance the removal ability of polishing materials. The MRR increased by 33.4% with the heterogeneous Fenton reaction compared with those without the heterogeneous Fenton reaction, and the contribution of the heterogeneous Fenton reaction to total material removal was 25.03%. The analysis of the SiC–Abrasive–MRE polishing pad contact state revealed that the heterogeneous Fenton reaction can oxidize the SiC surface and reduce the surface hardness, increasing the indentation depth δ wa of the abrasive grain into the SiC surface and exhibiting greater material removal.
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