G波段
拉曼光谱
石墨烯
堆积
材料科学
GSM演进的增强数据速率
谱线
分子物理学
兴奋剂
D波段
凝聚态物理
光学
光电子学
纳米技术
核磁共振
化学
物理
计算机科学
电信
天文
作者
D. Nikolaievskyi,M. Torregrosa,Alexandre Merlen,Sylvain Clair,Olivier Chuzel,Jean‐Luc Parrain,T. Neisus,A. de Campos,Martiane Cabié,C. Martin,C. Pardanaud
出处
期刊:Carbon
[Elsevier]
日期:2023-01-01
卷期号:203: 650-660
被引量:3
标识
DOI:10.1016/j.carbon.2022.12.010
摘要
Richness and complexity of Raman spectra related to graphene materials is established from years to decades, with, among others: the well-known G, D, 2D, … bands plus a plethora of weaker bands related to disorder behavior, doping, stress, crystal orientation or stacking information. Herein, we report on how to detect crumpling effects in Raman spectra, using a large variety of few and multilayer graphene. The main finding is that these crumples enhance the G band intensity like it does with twisted bi layer graphene. We updated the D over G band intensity ratio versus G bandwidth plot, which is generally used to disentangle point and linear defects origin, by reporting surface defects created by crumples. Moreover, we report for the first time on the existence 23 resonant additional bands at 633 nm. We attribute them to edge modes formed by high density of crumples. We use Raman plots (2D bands versus G band positions and widths) to gain qualitative information about the way layers are stacked.
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