Enhanced Synaptic Characteristics under Applied Magnetic Field in V2O5/NiMnIn-Based Switching Device for Neuromorphic Computing

The present study reports a memory structure Al/V2O5/NiMnIn on a flexible stainless steel (SS) substrate for neuromorphic applications. The fabricated device exhibits gradual SET and RESET switching characteristics with an OFF/ON resistance ratio of ∼100, good consistency of 4500, and excellent data retention capability up to 3000 s. The current–voltage (I–V) study supports an Ohmic conduction mechanism in the low-resistance state (LRS). In contrast, the trap-controlled modified space charge conduction mechanism demonstrated the high-resistance state (HRS). The resistance vs temperature measurement (R–T) in the LRS and HRS of the device signifies that oxygen vacancies form the conduction filament. We further analyze the synaptic functioning by applying identical consecutive voltage pulses, and the device's conductance change has been observed. These characteristics show a good representation of the biological memory synapse in terms of the artificial memory device. Long-term potentiation (LTP) and long-term depression (LTD) show nonlinear and asymmetry behavior, which is substantial for neuromorphic applications. A considerable shift in LTP and LTD was detected by applying external temperature and magnetic field. This is explained via temperature and magnetic field strain in the functional NiMnIn bottom electrode of the fabricated device. The mechanical flexibility of the memory structure was tested by exploring the switching characteristics with various bending angles and bending cycles. Therefore, the present study offers new avenues for flexible devices with high data storage capability for futuristic neuromorphic applications.