Origin of layer-dependent SERS tunability in 2D transition metal dichalcogenides

samples with various thicknesses were prepared respectively, and the results of comparative experiments proved that the layer-dependent SERS tunability of 2D semiconductors is directly related to the interlayer interaction. This work provided a novel method for further improving the SERS detection limit of 2D semiconductors and a possible strategy for the industrial upgrading of commercial SERS chips.