响应度
光探测
光电子学
材料科学
异质结
带隙
光电流
直接和间接带隙
光伏
半导体
光电效应
锑
光电探测器
光伏系统
生态学
生物
作者
Abin Varghese,Dipankar Saha,Kartikey Thakar,Vishwas Jindal,Sayantan Ghosh,Nikhil V. Medhekar,Sandip Ghosh,Saurabh Lodha
出处
期刊:Nano Letters
[American Chemical Society]
日期:2020-02-20
卷期号:20 (3): 1707-1717
被引量:163
标识
DOI:10.1021/acs.nanolett.9b04879
摘要
Pn heterojunctions comprising layered van der Waals (vdW) semiconductors have been used to demonstrate current-rectifiers, photodetectors, and photovoltaic devices. However, a direct or near-direct heterointerface bandgap for enhanced photogeneration in high light-absorbing few-layer vdW materials remains unexplored. In this work, for the first time, density functional theory calculations show that the heterointerface of few-layer group-6 transition metal dichalcogenide (TMD) WSe2 with group-7 ReS2 results in a sizable (0.7 eV) near-direct type-II bandgap. The interlayer IR bandgap is confirmed through IR photodetection, and microphotoluminescence measurements demonstrate type-II alignment. Few-layer flakes exhibit ultrafast response time (5 μs), high responsivity (3 A/W), and large photocurrent-generation and responsivity-enhancement at the hetero-overlap region (10-100×). Large open-circuit voltage of 0.64 V and short-circuit current of 2.6 μA enable high output electrical power. Finally, long-term air-stability and facile single contact metal fabrication process make the multifunctional few-layer WSe2/ReS2 heterostructure diode technologically promising for next-generation optoelectronics.
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