材料科学
电介质
介电常数
兴奋剂
介电损耗
X射线光电子能谱
介电谱
晶界
陶瓷
分析化学(期刊)
扫描电子显微镜
复合材料
微观结构
核磁共振
光电子学
物理化学
化学
电极
电化学
物理
色谱法
作者
Mao Zhong,Jinglei Li,Jian Shao,Yong Ge Cao,Kang Li,Weiwei Zhao
标识
DOI:10.1016/j.ceramint.2019.04.235
摘要
Dielectric materials with high permittivity and low dielectric loss have a range of promising applications within electronic devices. Here, we report on Zr co-doped (Ga0.5Nb0.5)0.03Ti0.97O2 ceramics, fabricated using a solid-state reaction. The colossal permittivity (CP) of (Ga0.5Nb0.5)0.03-(ZrxTi1-x)0.97O2 ceramics was investigated (x = 0%, 1%, 4%, 6%, 10%, 20%). When the doping value of Zr was 4%, the dielectric loss was reduced to 0.098 and, at room temperature and at a frequency of 1000 Hz, the dielectric permittivity was recorded as 2420. In addition, the material's dielectric permittivity exhibited good stability at temperatures ranging from −50 °C to 200 °C. Using X-ray photoelectron spectroscopy (XPS) and Scanning electron microscopy (SEM), we have observed that Zr doping reduces grain size and increases grain boundary regions. According to our XPS and impedance analysis, Zr doping also reduces the concentration of oxygen vacancies, which are considered to be the main cause of dielectric loss. We believe that the Zr doping is an effective method for reducing the dielectric loss of CP materials.
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