Outlook for high-NA EUV patterning: a holistic patterning approach to address upcoming challenges

In this talk we present core technology solutions for EUV Patterning and co-optimization between EUV resist and underlayer coating, development and plasma etch transfer to achieve best in class patterning performance. We will introduce new hardware and process innovations to address EUV stochastic issues, and present strategies that can extend into High NA EUV patterning. A strong focus will be placed on dose reduction opportunities, thin resist enablement and resist pattern collapse mitigation technologies. CAR and MOR performance for leading edge design rules will be showcased. As the first High NA EUV scanner is scheduled to be operational in 2023 in the joint high NA lab in Veldhoven, Tokyo Electron will collaborate closely with imec, ASML and our materials partners to accelerate High NA learning and support EUV roadmap extension.