Problems on the SRH Recombination Model and a Proposed Solution
作者
I. Takata
标识
DOI:10.1109/ispsd.2006.1666104
摘要
It's common that the present device simulator has a trouble to handle the life times in bipolar devices. However, the author could reproduce the JF-VFcharacteristics of some high speed pin diodes by including the radiative recombination. The simple SRH recombination model could not explain the JF-VFcharacteristics but also the JR-VRcharacteristics of pin diodes. Although the radiative recombination has been neglected in indirect semiconductors, the author would suggest the all types of recombination mechanisms, that are proportional to the carrier densities to the powered of one, two and three. And, the first one would contain a new powerful mechanism than the SRH's