电介质
晶体孪晶
平面的
材料科学
微晶
凝聚态物理
平面(几何)
陶瓷
高-κ电介质
介电常数
领域(数学分析)
常量(计算机编程)
晶界
复合材料
物理
几何学
微观结构
光电子学
数学
计算机图形学(图像)
计算机科学
程序设计语言
数学分析
冶金
作者
M.‐H. Whangbo,M. A. Subramanian
摘要
It is known that the unusually large dielectric constant in single crystals of CaCu3Ti4O12 (CCTO) requires the existence of barrier layers in the form of twin boundaries or planar defects within the crystals, and even the high dielectric constant of ceramic CCTO samples requires one to consider domain boundaries within the crystallites. As a probable origin of such domain boundaries, we proposed a structural model of plane defect that can result from a twinning parallel to the (100), (010), and (001) planes and examined its local electronic structures. This plane defect model provides a plausible microscopic explanation for the origin of gigantic dielectric constants in CCTO.
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