Stacking controlled altermagnetism and anomalous Hall conductivity in a two-dimensional bilayer VPS3

The anomalous Hall effect (AHE) governs low-dissipation lateral charge transport and serves as a key functional mechanism in spin electronics, including sensing, storage, and logic devices. The AHE is typically observed in ferromagnetic materials, while recent theoretical and experimental advances indicate that a significant AHE can be achieved in alternating collinear antiferromagnetic materials with zero net magnetization. Here, employing spin space group and magnetic layer group symmetry analysis, we demonstrate stacking-controlled AHE in two-dimensional altermagnets. Using bilayer VPS3 as a model system, we reveal how interlayer stacking reconstructs the spin degeneracy protection mechanism and induces unique i-wave and d-wave spin polarization textures in momentum space, even without spin–orbit coupling. Reorientation of the Néel vector induces a transformation of the magnetic layer group, selectively suppressing or activating the σxy component. These results provide a viable strategy for designing and realizing stacking-controlled AHE in two-dimensional altermagnetism, contributing to the potential applications of AHE in low-power, adaptively controlled spintronic devices and providing valuable insights for further exploration in the field of altermagnetism.