自愈
宏
材料科学
艺术
计算机科学
医学
替代医学
病理
程序设计语言
作者
Yushuang He,Feipeng Wang,Guoqiang Du,Lei Pan,Jian Li,Hongming Yang,Xiao Zhang,Zhicheng Zhang,Kaizheng Wang
出处
期刊:High voltage
[Institution of Engineering and Technology]
日期:2025-02-24
被引量:1
摘要
Abstract Metallised film capacitors (MFCs) are renowned for their unique self‐healing (SH) properties, which bestow them with exceptional reliability and stability in the face of intense electric fields, high voltages, and pulse power applications. Nonetheless, the exploration of SH characteristics concerning single‐layer dielectric film remains insufficient for advancing MFC reliability evaluation. To establish the theoretical correlation of SH characteristics from the device to the film in the MFCs, this work developed a simulation model to analyse the SH dynamic behaviour in the MFCs. The effects of coupling capacitors, arc resistance and insulation resistance on the macroscopic characteristics (voltage drop and pulse current) are focused during the SH process in MFCs. The results indicate that SH is primarily associated with the voltage drop duration rather than the sampling current. Consequently, the SH process in MFC is characterised as an abrupt decrease in voltage to its minimum value. This refinement enhances the SH energy dissipation model of MFC. The quantified relationship between the macroscopic characteristics and microstructure evolution (polypropylene decomposition and aluminium electrode vaporisation) is established in MFCs under diverse SH energy levels. As SH energy and duration increase, the proportion of energy attributed to polypropylene decomposition increases, resulting in multi‐layer ablation and adhesion within the metallised film and a pronounced deterioration in MFC electrical performance. The examination of macro–micro perspectives sheds new light on the intricate mechanisms governing the SH behaviour in MFCs, offering valuable insights for the advancement of their design, reliability evaluation, and performance optimisation in diverse electrical applications.
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