Six‐Inch High‐Purity Lead Halide Perovskite Wafer Derived from Ceramic Manufacturing Technique

Abstract Lead halide perovskites exhibit exceptional optoelectronic properties but face industrialization barriers due to the inability to fabricate large‐area, high‐quality wafers. Inspired by ceramic manufacturing techniques, a 6‐inch high‐purity perovskite wafer is developed, achieving carrier mobility, lifetime, and defect concentrations comparable to single crystals. This method demonstrates universality across diverse perovskites and enables heterojunction wafers, marking significant progress in carrier dynamics control. As a result, an X‐ray sensing array with 256 × 256 pixels is constructed using a 10 × 10 cm 2 perovskite heterojunction wafer, which exhibits a sensitivity of 36532 µCGy air −1 cm −2 and a low detection limit of 139 nGy air s −1 , superior to those in a single‐crystal detector (10640 µCGy air −1 cm −2 and 247 nGy air s −1 ). This breakthrough establishes a scalable pathway to industrial‐scale perovskite optoelectronics, overcoming critical manufacturing barriers while enabling high‐performance radiation imaging systems through wafer‐level heterostructure engineering.