Defect Engineering for Enhanced Charge Carrier Storage in Zirconium Stannum Halide Perovskites: Advancements in Low‐Temperature Data Storage and X‐Ray Imaging

Abstract Optimizing charge carrier storage in trap‐controlled halide perovskites poses a significant challenge, particularly due to the varying electronic properties and trap dynamics across a temperature range from ≈100 to 400 K. This temperature dependence affects both the efficiency of charge carrier generation and their retention. In this study, substantial advancements in the performance of zirconium stannum halide perovskites are reported through targeted defect engineering. By modulating the composition of Cs 2 Sn 1‐x Zr x Cl 6 and incorporating dopants of Cr 3+ , Ga 3+ , Bi 3+ , and Te 4+ , remarkable enhancements in X‐ray triggered charge storage capacity are realized. Notably, Cs 2 ZrCl 6 doped with Cr 3+ , Ga 3+ , or Bi 3+ exhibits a three fold increase in charge carrier storage from 100 to 300 K, significantly outperforming the performance of state‐of‐the‐art BaFBr(I):Eu 2+ and red afterglow Y 2 O 2 S:Eu 3+ phosphor. The Cs 2 Sn 1‐x Zr x Cl 6 :yTe 4+ demonstrates over 40 times greater charge carrier storage capacity across a wide temperature range from 100 to 400 K and achieves a low detection limit of 99.16 nGy for X‐ray dosimetry applications. Furthermore, Cs 2 ZrCl 6 :0.03Te 4+ exhibits exceptional persistent luminescence lasting over 6 and 14 h at 180 and 295 K. This research underscores the high‐performance capabilities of engineered halide perovskites, paving the way for their application in advanced dosimetry and X‐ray detection technologies at low temperatures.