单层
薄脆饼
材料科学
纳米技术
同质性(统计学)
兴奋剂
化学气相沉积
产量(工程)
晶体管
光电子学
计算机科学
电压
电气工程
复合材料
工程类
机器学习
作者
Wei Zheng,Xingdong Sun,Yongqing Cai,Yao Liang,Zhihua Zhang
出处
期刊:Crystals
[Multidisciplinary Digital Publishing Institute]
日期:2023-08-18
卷期号:13 (8): 1275-1275
被引量:3
标识
DOI:10.3390/cryst13081275
摘要
Monolayer MoS2 has emerged as a highly promising candidate for next-generation electronics. However, the production of monolayer MoS2 with a high yield and low cost remains a challenge that impedes its practical application. Here, a significant breakthrough in the batch production of wafer-scale monolayer MoS2 via chemical vapor deposition is reported. Notably, a single preparation process enables the growth of multiple wafers simultaneously. The homogeneity and cleanliness of the entire wafer, as well as the consistency of different wafers within a batch, are demonstrated via morphology characterizations and spectroscopic measurements. Field-effect transistors fabricated using the grown MoS2 exhibit excellent electrical performances, confirming the high quality of the films obtained via this novel batch production method. Additionally, we successfully demonstrate the batch production of wafer-scale oxygen-doped MoS2 films via in situ oxygen doping. This work establishes a pathway towards mass preparation of two-dimensional materials and accelerates their development for diverse applications.
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