Multi‐Wavelength Optoelectronic Synaptic Transistors Based on Transition Metal Telluride‐Sulfide Heterostructures

Abstract Neuromorphic visual systems based on optogenetic techniques have colossal potential for in‐memory computing with prospects of developing artificial intelligence vision systems. However, conventional transistor architectures face formidable challenges in efficient signal processing owing to limitations in the intrinsic properties of active channel materials. In this work, a novel transition metal telluride‐sulfide hybrid heterojunction‐based optoelectronic synaptic phototransistor is proposed, in which UV–vis responsive zinc oxide encapsulated few‐layer tungsten disulfide channel is decorated with near‐infrared sensitive 0D cobalt ditelluride (CoTe 2 ) nanocrystals (NCs), eliciting the ability to sense, store, and process optical signals across a broad range of the electromagnetic spectrum. This meticulously designed three‐layered heterostructure, based on their interfacial band alignments, enables high photoresponsivity up to ≈2.6 × 10 3 A W −1 at a back‐gate bias of 20 V, leading to the brain‐inspired synaptic applications with an average power consumption as low as 75 pJ for each training process. The device exhibits excitatory postsynaptic current, paired‐pulse facilitation with an index above 150%, as well as light‐modulated synaptic plasticity by mimicking biological synapses, which mainly originate from trapped holes in Co‐vacancy mediated surface defect states of CoTe 2 NCs. Hence, this 2D material‐based hybrid phototransistor appears to be a promising candidate for energy‐efficient next‐generation brain‐inspired neuromorphic vision systems.