硅
材料科学
钝化
退火(玻璃)
薄脆饼
杂质
氧气
Crystal(编程语言)
降水
分析化学(期刊)
光电子学
图层(电子)
纳米技术
冶金
化学
物理
有机化学
色谱法
气象学
计算机科学
程序设计语言
作者
Tomohiko Hara,Iori Oura,Takuma Matsuzuki,Yoshio Ohshita
出处
期刊:Crystals
[Multidisciplinary Digital Publishing Institute]
日期:2023-02-13
卷期号:13 (2): 310-310
标识
DOI:10.3390/cryst13020310
摘要
Suppression of the formation of crystal defects is essential for the realization of high-efficiency solar cells. The reactive plasma deposition (RPD) process introduces defects in the silicon crystal bulk and at the passivation layer/silicon crystal interface. This study suggests that oxygen impurities can affect the generation of RPD-induced defects. Although the RPD deposition conditions were the same, the number of RPD-induced recombination centers in Cz-Si was larger than that in the Fz wafer. The increase in 950 °C pre-annealing resulted in increased peak intensity corresponding to defect level E1 in the Cz-Si MOS sample. In the case of Fz-Si, the increase in intensity with increasing pre-annealing time was slight. This indicates that oxygen precipitation might be related to the structure of RPD-induced defects.
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