材料科学
铁电性
光伏系统
兴奋剂
光电子学
光电效应
薄膜
纳米技术
电气工程
电介质
工程类
作者
Jian Wu,Zhaoxiaohan Shi,Z. G. Bai,Yongsong Luo,Bingcheng Luo
标识
DOI:10.1016/j.ceramint.2024.02.147
摘要
Gallium nitride (GaN), one of the most popular optoelectronic materials in the semiconductor industry, has gained renewed interest as a ferroelectric material when alloyed with scandium. However, the inherent bulk photovoltaic effect (BPE) of GaN-based ferroelectrics has yet to be fully exploited. In this work, a BPE-driven self-powered photodetector based on ferroelectric Sc-doped GaN thin film was fabricated without the usage of a p-n contact. At zero bias, this device features a high responsivity of 45.9 mA/W, a high detectivity of 2.27 × 1011 Jones, a fast response speed of sub-ms-level, a high UV selectivity of 91.3, and an imaging capacity. This work demonstrates the potential of GaN-based ferroelectric thin films in energy-efficient optoelectronic devices.
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