The Effects of Etchant on via Hole Taper Angle and Selectivity in Selective Laser Etching

蚀刻(微加工) 各向同性腐蚀 材料科学 选择性 激光器 热的 中间层 光电子学 光学 复合材料 化学 物理 图层(电子) 催化作用 生物化学 气象学
作者
Jonghyeok Kim,Byungjoo Kim,Jiyeon Choi,Sanghoon Ahn
出处
期刊:Micromachines [Multidisciplinary Digital Publishing Institute]
卷期号:15 (3): 320-320 被引量:3
标识
DOI:10.3390/mi15030320
摘要

This research focuses on the manufacturing of a glass interposer that has gone through glass via (TGV) connection holes. Glass has unique properties that make it suitable for 3D integrated circuit (IC) interposers, which include low permittivity, high transparency, and adjustable thermal expansion coefficient. To date, various studies have suggested numerous techniques to generate holes in glass. In this study, we adopt the selective laser etching (SLE) technique. SLE consists of two processes: local modification via an ultrashort pulsed laser and chemical etching. In our previous study, we found that the process speed can be enhanced by changing the local modification method. For further enhancement in the process speed, in this study, we focus on the chemical etching process. In particular, we try to find a proper etchant for TGV formation. Here, four different etchants (HF, KOH, NaOH, and NH4F) are compared in order to improve the etching speed. For a quantitative comparison, we adopt the concept of selectivity. The results show that NH4F has the highest selectivity; therefore, we can tentatively claim that it is a promising candidate etchant for generating TGV. In addition, we also observe a taper angle variation according to the etchant used. The results show that the taper angle of the hole is dependent on the concentration of the etchant as well as the etchant itself. These results may be applicable to various industrial fields that aim to adjust the taper angle of holes.
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