材料科学
钆
兴奋剂
钙钛矿(结构)
平面的
光电子学
电子
电子转移
纳米技术
图层(电子)
化学
计算机科学
物理
光化学
结晶学
冶金
计算机图形学(图像)
量子力学
作者
Renjie Wang,Jionghua Wu,Shuping Wei,Jingwei Zhu,Minghuang Guo,Zheng Qiao,Wei Mao,Shuying Cheng
标识
DOI:10.1016/j.jpowsour.2022.231870
摘要
Metal halide perovskite solar cells have experienced unexpected rapid growth in the past decade due to their excellent photoelectric conversion efficiency. SnO 2 has attracted great attention as a candidate electron transport layer to replace TiO 2 in perovskite solar cells. However, the mixture of crystalline and amorphous states produces a large number of oxygen vacancy defects in the SnO 2 lattice and surface, leading to nonradiative recombination at the SnO 2 /perovskite interface. In this work, an effective method of doping the rare earth element Gd in SnO 2 is developed for planar perovskite solar cells. Doping with Gd ions can effectively passivate oxygen vacancy defects at the SnO 2 interface, leading to a decrease in surface energy, which contributes to facilitating the formation of high-quality perovskite films. Gd doping can also optimize the energy level matching between SnO 2 and the perovskite layer, thus improving the charge extraction and transport capabilities. As a result, the optimized device achieves a high power conversion efficiency of 22.40%, with a certified value of 21.95%. • Gd was first introduced into SnO 2 -based planar PSCs. • Gd doped SnO 2 PSCs achieved the best efficiency of 22.4%. • Gd doping reduces interfacial trap-assisted charge recombination. • Gd doped SnO 2 exhibited a better energy level arrangement with the perovskite.
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