自旋电子学
分子内力
材料科学
离域电子
有机半导体
自旋(空气动力学)
纳米技术
半导体
平面度测试
有机电子学
化学物理
光电子学
凝聚态物理
化学
物理
铁磁性
结晶学
量子力学
热力学
有机化学
晶体管
电压
立体化学
作者
Tingting Yang,Yang Qin,Meng Wu,Xianrong Gu,Ke Meng,Shunhua Hu,Cheng Zhang,Ankang Guo,Ruiheng Zheng,Rui Zhang,Lidan Guo,Xiangnan Sun
标识
DOI:10.1002/adma.202410695
摘要
Abstract Intramolecular noncovalent interaction (INCI), a crucial strategy for effectively enhancing molecular planarity and extending π ‐electron delocalization in organic semiconductors (OSCs), has played an increasingly important role in optoelectronic applications. However, though the INCI formation is regularly considered to improve the device performance by literature, there is no feasible approach to directly and reliably characterizing its formation in practical‐OSC films thus far. Here in this study, by theoretical analysis and calculation, the generation of INCIs in OSCs is found, normally consisting of relatively heavy elements, such as O···Se, O···S, N···S interactions, etc., can induce enhanced strength of spin‐orbit coupling, the primary factor dominating spin lifetime in OSCs. Based on this newly discovered theory, spin lifetime is creatively employed as a probe for sensitively detecting INCIs in OSC films via spin valves or field‐induced electron paramagnetic resonance, respectively. This study will highly promote academic and applicable developments of the cross‐cutting frontier research field between organic spintronics and electronics.
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