Characteristics of Multi‐Quantum‐Well Laser Diodes with Surface Electrode Structure Directly Bonded to InP Template on SiO2/Si Substrate

The lasing characteristics of separate‐confinement‐heterostructure multi‐quantum‐well (SCH‐MQW) laser diodes (LDs) grown on InP templates bonded to a SiO 2 /Si substrate using the hydrophilic bonding method are investigated. The layers of the SCH seven‐quantum‐well‐structured LD are grown by low‐pressure metal–organic vapor‐phase epitaxy. After the pulsed power supply of a high‐mesa waveguide is tested with a surface electrode structure, the LD grown on an InP/SiO 2 /Si substrate is found to exhibit superior lasing characteristics compared to an LD grown on an InP/Si substrate, and the threshold current density is equivalent to that of a surface‐electrode‐structured LD grown on an InP substrate. The slope efficiency of the LD grown on the InP/SiO 2 /Si substrate is compared with that of an LD grown on an InP/Si substrate.