材料科学
聚合物
热稳定性
杂原子
非易失性存储器
电阻随机存取存储器
闪存
二极管
兴奋剂
光电子学
纳米技术
退火(玻璃)
电压
化学
有机化学
电气工程
计算机科学
复合材料
工程类
操作系统
戒指(化学)
作者
Cheng Song,Zhe Zhou,Rong Chen,Minjie Zhang,Kang Chen,Zhengdong Liu,Juqing Liu
标识
DOI:10.1016/j.orgel.2021.106364
摘要
Heteroatoms doping is an effective strategy to boost polymer materials with desirable functions for advanced electronics and optoelectronics. Herein, two N or S heteroatoms were employed to construct large-area two-dimensional N, S-codoped conjugated microporous polymer (N, S-CMP) film for nonvolatile memory. The CMP films exhibited excellent thermal stability due to the cross-linked structure. The vertical diode with the sandwich structure of ITO/N, S-CMP/Al showed rewritable flash memory function, with a low switch voltage of 0.9 V, a high ON/OFF ratio of 1.3 × 102 and long retention time of up to 8 × 103 s. The flash behavior is probably attributed to the strongly coordinating S atoms with metal ions, which can lead the reproducible metal filament formation process. Impressively, even after annealing at 200 °C, the device also showed flash performance, indicating its excellent thermal stability. Our work provides a promising strategy to prepare CMPs for highly stable polymer memory.
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