同质结
发光二极管
光电子学
材料科学
电致发光
异质结
电压降
宽禁带半导体
二极管
隧道枢纽
电压
氮化物
量子效率
下降(电信)
p-n结
半导体
量子隧道
图层(电子)
纳米技术
电气工程
工程类
作者
Sheikh Ifatur Rahman,Zane Jamal-Eddine,Agnes Maneesha Dominic Merwin Xavier,R. Armitage,Siddharth Rajan
摘要
We demonstrate p-down green emitting LEDs with low turn-on voltage enabled by efficient tunnel junctions. Due to the polarization field alignment in the (In,Ga)N/GaN interface with the p-down orientation, the electrostatic depletion barrier for electron and hole injection is reduced when compared with the conventional p-up LEDs. A single (In,Ga)N/GaN heterostructure quantum well active region with a GaN homojunction tunnel junction exhibited very low forward operating voltage of 2.42 V at 20 A/cm2 with a peak electroluminescence emission wavelength of 520 nm for current densities above 100 A/cm2. The bottom tunnel junction with minimal voltage drop enabled excellent hole injection into the bottom p-GaN layer.
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