Multiple three-dimensional bottleneck barrier heights regarding fluctuated threshold voltage by ion implantation to source and drain extensions of silicon-on-insulator triple-gate fin-type field-effect transistors

Abstract We study numerically on multiple three-dimensional bottleneck barrier heights (BBHs 3D ) which might be origins of the fluctuated threshold voltage ( V th ) induced by random dopant fluctuation, depending on a drain voltage ( V d ). It is confirmed from variance inflation factor that multiple regression analysis with all the BBHs 3D is not suitable to investigate the fluctuated V th . Since 3D bottleneck barrier height minimum (BBH 3D,min ) has a very high correlation with the other BBHs 3D , simple regression analysis with even only one BBH 3D,min has a very high correlation with the V th . There is an optimal ordinal number for multiple BBHs 3D to be considered to investigate the fluctuated V th . It has been demonstrated that the V th can be expressed more accurately by using my proposed method of simple regression analysis considering optimal multiple BBHs 3D . Although the optimal multiple BBHs 3D decreases when the V d increases, the improvement is relatively similar regardless of the V d .