等离子体增强化学气相沉积
二硫化钨
X射线光电子能谱
化学气相沉积
材料科学
拉曼光谱
催化作用
过渡金属
剥脱关节
化学工程
钨
纳米技术
石墨烯
化学
冶金
有机化学
光学
物理
工程类
作者
Vinit Kanade,Hyeong‐U Kim,Chaitanya Kaluram Kanade,Dayeon Shin,Jae-Hyun Lee,Taesung Kim
出处
期刊:Meeting abstracts
日期:2019-05-01
卷期号:MA2019-01 (29): 1381-1381
标识
DOI:10.1149/ma2019-01/29/1381
摘要
Hydrogen holds tremendous promise as one of many alternatives for clean energy generation with high energy density and zeroes environmental impact. Hydrogen can be easily produced by using Platinum-based catalyst to efficiently lowers the large potential of electrolysis, but confined due to scarce and expensiveness. Transition metal dichalcogenides (TMDCs) such as MX 2 (M stands for Mo or W, Nb, Ta etc. and X= S, Se etc.) is essential materials which show promising catalytic activity. The bond between the metal and the chalcogen is a covalent bond, and the three layers themselves are held together by a weak van der Waals force. Tungsten Disulfide (WS 2 ) is a representative transition metal dichalcogenide (TMDC), has been freshly pursued as one of the promising alternatives for hydrogen evolution reaction (HER). Tungsten Disulfide is one of the promising TMDC materials due to its various application in electronics, catalysis, optical and other fields. The WS 2 elements were previously synthesized by different processes such as mechanical exfoliation, chemical exfoliation, chemical vapor deposition etc. In this work, we report a strategy for synthesis few layers of WS 2 at relatively low temperature (300 °C) using plasma enhanced chemical vapor deposition (PECVD) technique. The PECVD technology utilized to grow WS2 thin film directly on the 4-inch Si-SiO 2 wafer. The quality of a synthesized WS 2 was characterized by Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), High-resolution transmission electron microscopy (HR-TEM), and energy dispersive spectrometry (EDS) mapping. The thickness of the synthesized WS 2 film was found to be around a few nanometers and showed multilayered structure (~5-6 layers). The PECVD shows the advantage for the large area synthesis of WS 2 thin film with high uniformity, purity, and reproducibility for the mass production. The PECVD technology utilized to directly grown on glassy carbon electrode (GCE) for analysis of HER performance without any transfer process. The catalysis shows overpotential (η) of 0.50 V and Tafel slope 122.0 mV/decade. The HER performance of synthesized films was similar or higher when compared with drop casting technique. Figure 1
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