X射线光电子能谱
拉曼光谱
材料科学
化学气相沉积
碳纤维
氨硼烷
基质(水族馆)
氮化碳
硼嗪
氮化硼
碳膜
硼
氮化物
三聚氰胺
硼烷
化学工程
分析化学(期刊)
薄膜
化学
纳米技术
图层(电子)
复合数
有机化学
催化作用
光学
海洋学
氢气储存
光催化
复合材料
工程类
地质学
合金
物理
作者
Maito Kosaka,Noriyuki Urakami,Yuichi Hashimoto
标识
DOI:10.7567/jjap.57.02cb09
摘要
As a novel production method of boron carbon nitride (BCN) films, in this paper, we present the incorporation of B into graphitic carbon nitride (g-C3N4). First, we investigated the formation of g-C3N4 films via chemical vapor deposition (CVD) using melamine powder as the precursor. The formation of g-C3N4 films on a c-plane sapphire substrate was confirmed by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and Raman spectroscopy measurements. The deposition temperature of g-C3N4 films was found to be suitable between 550 and 600 °C since the degradation and desorption of hexagonal C–N bonds should be suppressed. As for BCN films, we prepared BCN films via two-zone extended CVD using ammonia borane as the B precursor. Several XPS signals from B, C, and N core levels were detected from B-incorporated g-C3N4 films. While the N composition was almost constant, the marked tendencies for increasing B composition and decreasing C composition were achieved with the increase in the B incorporation, indicating the incorporation of B atoms by the substitution for C atoms. Optical absorptions were shifted to the high-energy side by B incorporation, which indicates the successful formation of BCN films using melamine and ammonia borane powders as precursors.
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