微晶
材料科学
分析化学(期刊)
吸收边
薄膜
晶格常数
退火(玻璃)
硒化铜铟镓太阳电池
结晶学
化学计量学
吸收(声学)
衍射
带隙
光学
化学
冶金
纳米技术
光电子学
复合材料
物理化学
物理
色谱法
作者
D. Albin,J. R. Tuttle,G.D. Mooney,J. J. Carapella,A. Duda,A. Mason,R. Noufi
标识
DOI:10.1109/pvsc.1990.111684
摘要
The optical and microstructural properties of polycrystalline CuIn/sub 1-y/Ga/sub y/Se/sub 2/ (CIGS) thin film deposited by coevaporation are reported within the boundaries of an orthogonal experimental design investigating the effects of Cu flux, Ga/(Ga+In) composition. Se rate, substrate temperature, T/sub s/ and substrate type. The optical bandgaps for near-stoichiometric CuIn/sub 1-y/Ga/sub y/Se/sub 2/ are smaller and exhibit bowing behavior which follows the relationship E/sub g/=1.011+0.664y+0.249y(y-1). In comparison, Cu-poor films exhibit a linear variation with zero bowing given by E/sub g/=1.0032+0.71369y. The increase in E/sub g /with decreasing Cu may result in part from lattice shrinkage as measured by X-ray diffraction (XRD). Optical absorption below the band edge appears to be dependent upon both Cu and Ga content. Absorption coefficients of alpha >or=10/sup 3/ cm/sup -1/ within this region are indicative of Cu-rich films. Absorption or=50% Ga. The magnitude of alpha varies from equivalent to 2*10/sup 4/ near the band edge tip to 10/sup 5/ cm/sup -1/ at 1 ev above the edge for near-stoichiometric films, with the absorption in Cu-poor films being slightly less.<>
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