负偏压温度不稳定性
降级(电信)
材料科学
氧化物
扩散
氢
光电子学
电子工程
电气工程
MOSFET
晶体管
热力学
工程类
化学
电压
物理
有机化学
冶金
作者
Chia Lin Chen,Yu‐Min Lin,C.j. Wang,Kuo-Chen Wu
标识
DOI:10.1109/relphy.2005.1493214
摘要
A new finding on 1.2 nm NBTI lifetime is proposed as an E-model for the low field region (<10 MV/cm) and a power law model for the high field region (>10 MV/cm). The NBTI lifetime stressed in the low field (<10 MV/cm) and extrapolated by the E-model is a better choice for 1.2 nm NBTI lifetime prediction. The NBTI degradation characteristics, accelerated degradation factors and lifetime prediction model for this 1.2 nm ultra thin oxide are systematically investigated. The mechanism of NBTI degradation on 1.2 nm ultra thin oxide is explained as the hydrogen diffusion model which supports the non-saturated degradation behavior and lifetime prediction model.
科研通智能强力驱动
Strongly Powered by AbleSci AI