Growth of Lanthanum Silicate Thin Films by Liquid Injection MOCVD Using Tris[bis(trimethylsilyl)amido]lanthanum

Lanthanum silicate is deposited from a single‐source precursor by injection MOCVD using La[N(SiMe3)2]3 as precursor. The depositions are carried out over 350–600 °C without an additional silicon source. SEM analysis (Figure) shows that deposited films are smooth and featureless. AES analysis indicates that all the films are lanthanum silicate with silicon concentration ranging from 8.5 to 15.2 at.‐%.