材料科学
抗弯强度
电介质
复合材料
多孔性
氮化硅
陶瓷
多孔硅
烧结
微观结构
图层(电子)
光电子学
作者
Ling Li,Bao Xin Zhu,Hong Sheng Wang,Jie Zhang
出处
期刊:Solid State Phenomena
日期:2018-08-01
卷期号:281: 610-615
被引量:6
标识
DOI:10.4028/www.scientific.net/ssp.281.610
摘要
The porous silicon nitride ceramics with low dielectric constant and high flexural strength were obtained by adding pore-forming agent through partial sintering technique. The effects of pore-forming agent amount on the properties of porous silicon nitride ceramics were investigated. Microstructure was analyzed by means of scanning electron microscopy. The results show that the porous structure is formed by the overlap of pillar β-Si 3 N 4 with high length diameter ratio. The porosity of samples rises with the increase of pore-forming agent content, which leads to the decrease of the dielectric constant and loss, but the decrease of flexural strength. When the pore-forming agent of PMMA with mass fraction of 20% was added, the volume density, porosity, dielectric constant and loss of porous silicon nitride ceramics were 1.17g/cm 3 , 66.5%, 2.33 and 0.8×10 -3 respectively, with higher flexural strength of 75MPa which is satisfactory as low dielectric material for core layer of broadband radome.
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