Hot carrier reliability of radiation hardened T-gate PD SOI NMOSFET after TID radiation

TID(total dose effect) and HCI(hot carrier injection) are hot issues of space application devices research in recent years. Previous studies drew the conclusion that TID radiation harden process can restrain HCI effectively. However, there have few reliability studies on radiation hardened device reported. In this article, the author irradiates RH T-Gate PD SOI NMOS and conduct a hot carrier experiment afterwards. He makes a detailed analysis of RH devices' hot carrier reliability in different structure and reach a conclusion that radiation-induced HCI enhancement effect still exists in RH SOI experienced TID radiation because of the presence of buried oxide, which is contrary to results of previous studies on bulk silicon devices.