Numerical simulation of the nonlinear response of a p-i-n photodiode under high illumination

A theoretical study and a model for the numerical simulation of the nonlinear electrical response, including the harmonic-generation rate calculation, of a p-i-n InGaAs photodiode under high-illumination conditions are discussed. The device structure is described. An algorithm, which is based on a finite-difference calculation, is used to calculate the temporal electrical response of the device to a microwave optical input signal. The different harmonics in the power spectrum are obtained using the fast Fourier transform (FFT) calculation. This model is a tool for designing the p-i-n photodiode and determining the conditions for its utilization in order to avoid the electrical response nonlinearity.< >