Developing a two-parabolic band model for thermoelectric transport modelling using Mg 2 Sn as an example

带隙 材料科学 掺杂剂 热电效应 功勋 热电材料 工程物理 凝聚态物理 半金属 光电子学 兴奋剂 热力学 物理
作者
Harshita Naithani,Eckhard Müller,Johannes de Boor
出处
期刊:JPhys energy [IOP Publishing]
卷期号:4 (4): 045002-045002 被引量:11
标识
DOI:10.1088/2515-7655/ac7fb8
摘要

Abstract Thermoelectrics is a field driven by material research aimed at increasing the thermal to electrical conversion efficiency of thermoelectric (TE) materials. Material optimisation is necessary to achieve a high figure of merit ( zT ) and in turn a high conversion efficiency. Experimental efforts are guided by the theoretical predictions of the optimum carrier concentration for which generally the single parabolic band (SPB) model is used which considers the contribution to electronic transport only from the majority carriers’ band. However, most TE materials reach peak performance (maximum zT ) close to their maximum application temperature and when minority carrier effects become relevant. Therefore, single band modelling is insufficient to model the behaviour of TE materials in their most practically relevant temperature range. Inclusion of minority effects requires addition of the minority carrier band and necessitates the use of a two-band model—the simplest and, for most cases, sufficient improvement. In this study, we present a systematic methodology for developing a two-band model using one valence and one conduction band for any given TE material. The method utilises in part the SPB model and in part a simple cost function based analysis to extract material parameters like density of states masses, band gap, deformation potential constant etc., based on easily available experimental data. This simple and powerful method is exemplified using Mg 2 Sn, chosen due to its low band gap, the availability of experimental data in a wide range of dopant concentrations and its practical importance, being an end member of the highly popular Mg 2 (Si,Sn) solid solutions. Using the experimental data for p- and n-type Mg 2 Sn from literature, a two-band model was obtained. Optimum carrier concentration and maximum zT were predicted from both SPB and two-band models and at 650 K pronounced differences between the two models, which could prevent realisation of maximum zT , were observed, demonstrating the practical necessity to model the effect of minority carriers.
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