Electronic impurity levels in semiconductors

The theory of the electronic states of crystals containing point defects in small concentration is reviewed and its application to the case of semiconductors is discussed. The basic properties of scattering and resonant and bound states are related to the band structure of the semiconductor. The form of the impurity potentials and the effect of the dielectric screening and deep levels are also discussed. Applications to the cases of donor acceptor and isoelectronic impurities are described, making use of the effective mass approximation and taking into account interband mixing and central cell corrections. Existing calculations are reviewed and compared with some of the experimentally known levels. Optical processes involving transitions between all types of electronic levels are described and experimental evidence for them is reported. Effects of external perturbations like uniaxial pressure, electric and magnetic fields are finally examined.