Control of dislocation structures in LEC single crystal InP

Abstract It is shown here that formation of the major dislocation structures detected in single crystal InP, such as clusters and large rectangular prismatic loops, can be prevented during LEC growth. The conditions under which this control can be applied are entirely compatible with the techniques used to inhibit dislocation formation both by slip and the propagation of dislocations from the seed. In consequence, InP crystals with very low dislocation densities can now be produced.