UV-Raman Spectroscopy Study on SiO2/Si Interface

We evaluated oxidation-induced stresses in Si crystal and qualities of Si crystal near the SiO2/Si interfaces formed in dry O2 and O radicals using UV-Raman spectroscopy with a 364 nm excitation laser. The compressive stresses were observed in Si near the SiO2/Si interfaces formed in dry O2 and O radicals. The stresses induced by the oxidation at 1050oC were higher than those at 900oC and 1000oC. It was also shown that the stress in Si crystal and the quality of Si crystal near the SiO2/Si interface formed in dry O2 depended on the degree of oxygen dilution and the oxidation time. The SiO2/Si interface formed in O radicals exhibited larger compressive stress and better crystal quality as compared with that formed in dry O2.