CMOS芯片
ISFET
阈值电压
阈下传导
阈下斜率
电子工程
MOSFET
半导体器件建模
晶体管
偏移量(计算机科学)
场效应晶体管
灵敏度(控制系统)
电压
噪音(视频)
材料科学
工程类
电气工程
计算机科学
人工智能
图像(数学)
程序设计语言
作者
Yan Liu,Pantelis Georgiou,Themis Prodromakis,Timothy G. Constandinou,C. Toumazou
标识
DOI:10.1109/ted.2011.2168821
摘要
This paper presents an extended model for the CMOS-based ion-sensitive field-effect transistor, incorporating design parameters associated with the physical geometry of the device. This can, for the first time, provide a good match between calculated and measured characteristics by taking into account the effects of nonidealities such as threshold voltage variation and sensor noise. The model is evaluated through a number of devices with varying design parameters (chemical sensing area and MOSFET dimensions) fabricated in a commercially available 0.35-μm CMOS technology. Threshold voltage, subthreshold slope, chemical sensitivity, drift, and noise were measured and compared with the simulated results. The first- and second-order effects are analyzed in detail, and it is shown that the sensors' performance was in agreement with the proposed model.
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